2SC5888 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SC5888 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
360mV @ 250mA, 5A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.61000
$0.61
500
$0.6039
$301.95
1000
$0.5978
$597.8
1500
$0.5917
$887.55
2000
$0.5856
$1171.2
2500
$0.5795
$1448.75
2SC5888 Product Details
2SC5888 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 360mV @ 250mA, 5A.Product comes in TO-220ML supplier package.The device exhibits a collector-emitter breakdown at 50V.
2SC5888 Features
the DC current gain for this device is 200 @ 1A 2V the vce saturation(Max) is 360mV @ 250mA, 5A the supplier device package of TO-220ML
2SC5888 Applications
There are a lot of Rochester Electronics, LLC 2SC5888 applications of single BJT transistors.