Welcome to Hotenda.com Online Store!

logo
userjoin
Home

EPC2012

EPC2012

EPC2012

EPC

TRANS GAN 200V 3A BUMPED DIE

SOT-23

EPC2012 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~125°C TJ
Packaging Cut Tape (CT)
Published 2012
Series eGaN®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 145pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 3A
Input Capacitance 145pF
Rds On Max 100 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.35575 $1.35575

Related Part Number

BUK9880-55/CUF
FQD2N60CTF
FQD2N60CTF
$0 $/piece
IRFBC30ASTRRPBF
IRFIZ48G
IRFIZ48G
$0 $/piece
IXFC13N50
IXFC13N50
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News