EPC2012

new-10%

Manufacturer part number:EPC2012

Manufacturer:EPC

Description:TRANS GAN 200V 3A BUMPED DIE

Case Package:SOT-23

Datasheet:EPC2012 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-40°C~125°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	eGaN®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	145pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	+6V, -5V
Continuous Drain Current (ID)	3A
Input Capacitance	145pF
Rds On Max	100 mΩ
RoHS Status	ROHS3 Compliant