IRF8306MTR1PBF

new-10%

Manufacturer part number:IRF8306MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 23A DIRECTFET

Case Package:SOT-23

Datasheet:IRF8306MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.1W Ta 75W Tc
Element Configuration	Single
Power Dissipation	2.1W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4110pF @ 15V
Current - Continuous Drain (Id) @ 25°C	23A Ta 140A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 4.5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	4.11nF
FET Feature	Schottky Diode (Body)
Drain to Source Resistance	25mOhm
Rds On Max	2.5 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant