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FQD2N60CTF

FQD2N60CTF

FQD2N60CTF

ON Semiconductor

MOSFET N-CH 600V 1.9A DPAK

SOT-23

FQD2N60CTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 1.9A
Number of Elements 1
Voltage 650V
Power Dissipation-Max 2.5W Ta 44W Tc
Element Configuration Single
Current 18A
Power Dissipation 2.5W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7 Ω @ 950mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 1.9mA
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 2.3mm
Length 6.6mm
Width 6.1mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.160836 $0.160836
10 $0.151731 $1.51731
100 $0.143143 $14.3143
500 $0.135041 $67.5205
1000 $0.127397 $127.397

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