FQD2N60CTF

new-10%

Manufacturer part number:FQD2N60CTF

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 1.9A DPAK

Case Package:SOT-23

Datasheet:FQD2N60CTF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	1.9A
Number of Elements	1
Voltage	650V
Power Dissipation-Max	2.5W Ta 44W Tc
Element Configuration	Single
Current	18A
Power Dissipation	2.5W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.7 Ω @ 950mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.9A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	1.9mA
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	2.3mm
Length	6.6mm
Width	6.1mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free