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IRF8302MTR1PBF

IRF8302MTR1PBF

IRF8302MTR1PBF

Infineon Technologies

MOSFET N CH 30V 31A MX

SOT-23

IRF8302MTR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6030pF @ 15V
Current - Continuous Drain (Id) @ 25°C 31A Ta 190A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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