IRFB4228PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFB4228PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Resistance
15MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Voltage - Rated DC
-150V
Technology
MOSFET (Metal Oxide)
Current Rating
-83A
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Power Dissipation
330W
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4530pF @ 25V
Current - Continuous Drain (Id) @ 25°C
83A Tc
Gate Charge (Qg) (Max) @ Vgs
107nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
83A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Input Capacitance
4.53nF
Recovery Time
110 ns
Drain to Source Resistance
15mOhm
Rds On Max
15 mΩ
Nominal Vgs
30 V
Height
16.51mm
Length
10.6426mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRFB4228PBF Product Details
IRFB4228PBF Description
The Infineon Technologies IRFB4228PBF is from the StrongIRFET? power MOSFET family and is optimized for low RDS(on) and high current capability. The devices are ideal for low-frequency applications requiring performance and ruggedness.
IRFB4228PBF Features
Industry-standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body diode compared to previous silicon generation