IPU60R1K4C6BKMA1

new-10%

Manufacturer part number:IPU60R1K4C6BKMA1

Manufacturer:Infineon Technologies

Description:MOSFET LOW POWER_PRICE/PERFORM

Case Package:SOT-23

Datasheet:IPU60R1K4C6BKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~155°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	28.4W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	28.4W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.2A Tc
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	26 mJ
FET Feature	Super Junction
RoHS Status	Non-RoHS Compliant