FDC658AP

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FDC658AP

Manufacturer part number:FDC658AP

Manufacturer:ON Semiconductor

Description:FDC658AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDC658AP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	50MOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	8.1nC @ 5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	4mA
Threshold Voltage	-1.8V
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.8 V
Feedback Cap-Max (Crss)	90 pF
Height	900μm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free