N-Channel 100mOhm @ 9A, 10V ±20V 1700 pF @ 25 V 80 V TO-220-3
SOT-23
RFP18N08 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
TO-220-3
Mounting Type
Through Hole
Supplier Device Package
TO-220
Mfr
Harris Corporation
Product Status
Active
Package
Bulk
Power Dissipation (Max)
75W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drain to Source Voltage (Vdss)
80 V
Vgs (Max)
±20V
FET Feature
-
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.235960
$1.23596
10
$1.166000
$11.66
100
$1.100000
$110
500
$1.037736
$518.868
1000
$0.978996
$978.996
RFP18N08 Product Details
RFP18N08 Overview
A device's maximum input capacitance is 1700 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 80 V drain to source voltage (Vdss).
RFP18N08 Features
a 80 V drain to source voltage (Vdss)
RFP18N08 Applications
There are a lot of Harris Corporation RFP18N08 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,