AIKW30N60CTXKSA1 Description

The AIKW30N60CTXKSA1 is a Low Loss DuoPack: IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery antiparallel Emitter Controlled diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

AIKW30N60CTXKSA1 Features

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low gate charge QG

• Green package

• Very soft, fast recovery antiparallel EmitterControlled HE

• diode

• TRENCHSTOP? and Fieldstop technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

• Automotive AEC-Q101 qualified

• Designed for DC/AC converters for Automotive Application

• Very low VCE(sat) 1.5V (typ.)

• Maximum junction temperature 175°C

• Dynamically stress tested

• Short circuit withstand time 5μs

• 100% short circuit tested

• 100% of the parts are dynamically tested

AIKW30N60CTXKSA1 Applications

• PTC heater

• Motor drives

• Main inverter

• Climate compressor