AIKW50N60CTXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AIKW50N60CTXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
Automotive, AEC-Q101, TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
333W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 50A, 7Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
IGBT Type
Trench Field Stop
Gate Charge
310nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
26ns/299ns
Switching Energy
1.2mJ (on), 1.4mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$41.876537
$41.876537
10
$39.506167
$395.06167
100
$37.269968
$3726.9968
500
$35.160348
$17580.174
1000
$33.170140
$33170.14
AIKW50N60CTXKSA1 Product Details
AIKW50N60CTXKSA1 Description
AIKW50N60CTXKSA1 is a single N-channel IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of the AIKW50N60CTXKSA1 is -40°C~175°C TJ and its Current - Collector (Ic) (Max) is 80A. AIKW50N60CTXKSA1 has 3 pins and it is available in Tube packaging way. The Voltage - Collector Emitter Breakdown (Max) of AIKW50N60CTXKSA1 is 600V.
AIKW50N60CTXKSA1 Features
AutomotiveAEC-Q101qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat)1.5V (typ.)
Maximum junction temperature 175°C
Dynamically stress tested
Short circuit with stand time 5μs
100% short circuit tested
100% of the parts are dynamically tested
Positive temperature coefficient in VCE(sat)
Low EMI
Low gate charge QG
Green package
Very soft,fast recovery antiparallel Emitter Controlled HE