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AIKW50N65DF5XKSA1

AIKW50N65DF5XKSA1

AIKW50N65DF5XKSA1

Infineon Technologies

AIKW50N65DF5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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AIKW50N65DF5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2012
Series Automotive, AEC-Q101, Trenchstop™ 5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 270W
Voltage - Collector Emitter Breakdown (Max) 650V
Test Condition 400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench
Gate Charge 1018nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 21ns/156ns
Switching Energy 490μJ (on), 140μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.02000 $8.02
10 $7.24200 $72.42
240 $5.99575 $1438.98
720 $5.22101 $3759.1272
AIKW50N65DF5XKSA1 Product Details

AIKW50N65DF5XKSA1 Description


AIKW50N65DF5XKSA1 is a type of TRENCHSTOPTM 5 high-speed switching IGBT co-packed with RAPID 1 fast and soft antiparallel diode. It is designed based on high-speed switching series 5th generation to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low gate charge QG. Based on its specific characteristics, the AIKW50N65DF5XKSA1 IGBT is well suited for a wide range of applications, including an off-board charger, an on-board charger, a DC/DC converter, and power-factor correction.



AIKW50N65DF5XKSA1 Features


Maximum junction temperature 175°C

650V breakdown voltage

LowQG

Full rated current RAPID 1 anti-parallel diode

High-speed F5 technology



AIKW50N65DF5XKSA1 Applications


Off-board charger

On-board charger

DC/DC converter

Power-factor correction


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