IGB30N60H3ATMA1

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Manufacturer part number:IGB30N60H3ATMA1

Manufacturer:Infineon Technologies

Description:IGB30N60H3ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGB30N60H3ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	GB30N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	187W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Turn On Time	40 ns
Test Condition	400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Turn Off Time-Nom (toff)	262 ns
IGBT Type	Trench Field Stop
Gate Charge	165nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	18ns/207ns
Switching Energy	1.17mJ
RoHS Status	ROHS3 Compliant