FGH50T65UPD

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Manufacturer part number:FGH50T65UPD

Manufacturer:ON Semiconductor

Description:FGH50T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH50T65UPD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	50 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Number of Elements	1
Rise Time-Max	77ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	100A
Reverse Recovery Time	53 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	101 ns
Test Condition	400V, 50A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 50A
Turn Off Time-Nom (toff)	185 ns
IGBT Type	Trench Field Stop
Gate Charge	230nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	32ns/160ns
Switching Energy	2.7mJ (on), 740μJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Fall Time-Max (tf)	29ns
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free