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IXXX100N60C3H1

  • IXXX100N60C3H1
  • IXXX100N60C3H1

IXXX100N60C3H1

IXXX100N60C3H1

IXYS

IGBT Transistors GenX3 w/Diode XPT 600V

SOT-23

IXXX100N60C3H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Packaging Tube
Series GenX3™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 695W
Reach Compliance Code not_compliant
Operating Temperature (Max) 150°C
Input Type Standard
Power - Max 695W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 170A
Reverse Recovery Time 140 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A
IGBT Type PT
Gate Charge 150nC
Current - Collector Pulsed (Icm) 340A
Td (on/off) @ 25°C 30ns/90ns
Switching Energy 2mJ (on), 950μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $17.67667 $530.3001

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