FDMS86200DC

new-10%

Manufacturer part number:FDMS86200DC

Manufacturer:ON Semiconductor

Description:FDMS86200DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86200DC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	90mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Dual Cool™, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.2W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.2W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2955pF @ 75V
Current - Continuous Drain (Id) @ 25°C	9.3A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	9.3A
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Avalanche Energy Rating (Eas)	294 mJ
Max Junction Temperature (Tj)	150°C
Height	1.05mm
Length	5.1mm
Width	5.85mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free