SI1050X-T1-GE3

new-10%

Manufacturer part number:SI1050X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 8V 1.34A SC-89-6

Case Package:SOT-23

Datasheet:SI1050X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32.006612mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	86m Ω @ 1.34A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 4V
Current - Continuous Drain (Id) @ 25°C	1.34A Ta
Gate Charge (Qg) (Max) @ Vgs	11.6nC @ 5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	1.34A
Gate to Source Voltage (Vgs)	5V
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	8V
Nominal Vgs	5 V
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant