AUIRF3710Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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AUIRF3710Z Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2010
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
77ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
56 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
59A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
240A
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
2 V
Height
9.017mm
Length
10.6426mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
AUIRF3710Z Product Details
AUIRF3710Z Description
AUIRF3710Z is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and improved repetitive avalanche rating can also be delivered. All these features enable this device to be well suited for automotive and other applications.