AUIRF7103QTR

new-10%

Manufacturer part number:AUIRF7103QTR

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 50V 3A 8SOIC

Case Package:SOT-23

Datasheet:AUIRF7103QTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	2.4W
Terminal Form	GULL WING
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Turn On Delay Time	5.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	255pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	1.7ns
Drain to Source Voltage (Vdss)	50V
Fall Time (Typ)	2.3 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.13Ohm
Drain to Source Breakdown Voltage	50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free