SI1902DL-T1-E3

new-10%

Manufacturer part number:SI1902DL-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 0.66A SC70-6

Case Package:SOT-23

Datasheet:SI1902DL-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	7.512624mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	385MOhm
Max Power Dissipation	270mW
Terminal Form	GULL WING
Base Part Number	SI1902
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	270mW
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	385m Ω @ 660mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 4.5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	660mA
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	600 mV
Height	1.1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free