Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DMN63D8LDW-7

DMN63D8LDW-7

DMN63D8LDW-7

Diodes Incorporated

DMN63D8LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

SOT-23

DMN63D8LDW-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DMN63D8L
Reference Standard AEC-Q101
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 3.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 870nC @ 10V
Rise Time 3.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 4.5Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06115 $0.18345
6,000 $0.05376 $0.32256
15,000 $0.04637 $0.69555
30,000 $0.04390 $1.317
75,000 $0.04144 $3.108
150,000 $0.03651 $5.4765
DMN63D8LDW-7 Product Details

DMN63D8LDW-7                           Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 

DMN63D8LDW-7                           Features

· Dual N-Channel MOSFET

· Low On-Resistance

· Low Input Capacitance

· Fast Switching Speed

· Small Surface Mount Package

· ESD Protected Gate

· Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

· Halogen and Antimony Free. “Green” Device (Note 3)

· For automotive applications requiring specific change

control (i.e. parts qualified to AEC-Q100/101/200, PPAP

capable, and manufactured in IATF 16949 certified

facilities), please contact us or your local Diodes

representative.

 

DMN63D8LDW-7                           Applications

· DC-DC Converters

· Power Management Functions

· Battery Operated Systems and Solid-State Relays

· Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News