FDS6990AS

new-10%

FDS6990AS

Manufacturer part number:FDS6990AS

Manufacturer:ON Semiconductor

Description:FDS6990AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS6990AS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®, SyncFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	22mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	900mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	8 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.5A
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Rise Time	8ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	7.5mA
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.5A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	1.7 V
Height	1.75mm
Length	5mm
Width	4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free