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AUIRF7640S2TR

  • AUIRF7640S2TR
  • AUIRF7640S2TR

AUIRF7640S2TR

AUIRF7640S2TR

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 36m Ω @ 13A, 10V ±20V 450pF @ 25V 11nC @ 10V DirectFET™ Isometric SB

SOT-23

AUIRF7640S2TR Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SB
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.4W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 6.3 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 77A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 57 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,800 $0.54877 $2.19508
9,600 $0.52814 $4.75326
AUIRF7640S2TR Product Details

AUIRF7640S2TR Description


The AUIRF7640S2TR combines the latest Automotive HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging platform to produce a best-in-class part for Automotive Class D audio amplifier applications. This HEXFET? Power MOSFET AUIRF7640S2TR optimizes gate charge, body diode reverse recovery, and internal gate resistance to improve key Class D audio amplifier's performance factors such as efficiency, THD, and EMI.



AUIRF7640S2TR Features


  • Advanced Process Technology

  • Optimized for Class D Audio Amplifier and High-Speed Switching Applications

  • Low Rds(on) for Improved Efficiency

  • Low Qg for Better THD and Improved Efficiency

  • Low Qrr for Better THD and Lower EMI

  • Low Parasitic Inductance for Reduced Ringing and Lower EMI

  • Delivers up to 100W per Channel into 8? Load

  • Dual Sided Cooling

  • 175°C Operating Temperature

  • Repetitive Avalanche Capability for Robustness and Reliability

  • Lead-free, RoHS and Halogen-free

  • Automotive Qualified 



AUIRF7640S2TR Applications


  • Automotive Class D audio amplifier

  • Home theater in a box systems

  • Mobile phones

  • Hearing aids

  • Powered speakers

  • High-end audio


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