AUIRF7647S2TR

new-10%

Manufacturer part number:AUIRF7647S2TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 5.9A DIRECTFET

Case Package:SOT-23

Datasheet:AUIRF7647S2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SC
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 41W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
Case Connection	DRAIN
Turn On Delay Time	5.5 ns
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	31m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.9A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	8.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Polarity/Channel Type	P-CHANNEL
Fall Time (Typ)	4.6 ns
Turn-Off Delay Time	7.9 ns
Continuous Drain Current (ID)	5.9A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	24A
Drain-source On Resistance-Max	0.031Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	95A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free