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AUIRF7759L2TR

AUIRF7759L2TR

AUIRF7759L2TR

Infineon Technologies

AUIRF7759L2TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRF7759L2TR Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 15
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N9
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12222pF @ 25V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.0023Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 257 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $3.39197 $13.56788
AUIRF7759L2TR Product Details

AUIRF7759L2TR Descriptions


The AUIRF7759L2TR(1) combines the latest Automotive HEXFET? Power MOSFET Silicon technology with innovative DirectFET? packaging to deliver the lowest on-state resistance in a DPak (TO-252AA)-sized package with a 0.7 mm profile. When application note AN-1035 addressing manufacturing methods and processes is followed, the DirectFET? package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. In automotive power systems, the DirectFET? packaging enables dual-sided cooling to enhance thermal transfer.



AUIRF7759L2TR  Features


  • Advanced Process Technology

  • Optimized for Automotive Motor Drive, DC-DC, and other Heavy Load Applications

  • Exceptionally Small Footprint and Low Profile

  • High Power Density

  • Low Parasitic Parameters

  • Dual Sided Cooling

  • 175°C Operating Temperature

  • Repetitive Avalanche Capability for Robustness and Reliability

  • Lead-free, RoHS and Halogen-free

  • Automotive Qualified



AUIRF7759L2TR Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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