AUIRF7769L2TR

new-10%

AUIRF7769L2TR

Manufacturer part number:AUIRF7769L2TR

Manufacturer:Infineon Technologies

Description:AUIRF7769L2TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF7769L2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	15
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 74A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	375A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	375A
Threshold Voltage	2.7V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.0035Ohm
Pulsed Drain Current-Max (IDM)	500A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	260 mJ
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free