AUIRF7769L2TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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AUIRF7769L2TR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Number of Pins
15
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-XBCC-N9
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.3W Ta 125W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 74A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
375A Tc
Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
375A
Threshold Voltage
2.7V
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.0035Ohm
Pulsed Drain Current-Max (IDM)
500A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
260 mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$2.75103
$11.00412
AUIRF7769L2TR Product Details
AUIRF7769L2TR Description
AUIRF7769L2TR is a 100v Automotive DirectFET? Power MOSFET. The AUIRF7769L2TR combines the latest Automotive HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET? package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, and infra-red or convection soldering techniques when application note AN-1035 is followed regarding the manufacturing methods and processes.?
AUIRF7769L2TR Features
Advanced Process Technology
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability