FDS5351

new-10%

Manufacturer part number:FDS5351

Manufacturer:ON Semiconductor

Description:FDS5351 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS5351 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	35MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1310pF @ 30V
Current - Continuous Drain (Id) @ 25°C	6.1A Ta
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6.1A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	73 mJ
Nominal Vgs	2 V
Height	1.57mm
Length	4.9mm
Width	3.9mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free