IPW60R017C7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPW60R017C7XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Package / Case
TO-247-3
Surface Mount
NO
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Operating Mode
ENHANCEMENT MODE
Power Dissipation
446W
Case Connection
DRAIN
Turn On Delay Time
30 ns
Transistor Application
SWITCHING
Drain to Source Voltage (Vdss)
650V
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
106 ns
Continuous Drain Current (ID)
109A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
495A
Avalanche Energy Rating (Eas)
582 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
15mOhm
Height
25.4mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$17.59967
$4223.9208
IPW60R017C7XKSA1 Product Details
IPW60R017C7XKSA1 Description
IPW60R017C7XKSA1 is a 600V CoolMOS? C7 power transistor, a revolutionary technology for high voltage power MOSFETs. IPW60R017C7XKSA1 is designed according to the super-junction (SJ) principle and is suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS, and solar.
IPW60R017C7XKSA1 Features
Best in class RDS(on)/package
Enabling higher system efficiency by lower switching losses
Increased power density solutions due to smaller packages
Suitable for hard and soft switching (PFC and high-performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Qualified for industrial-grade applications according to JEDEC (J-STD20 and JESD22)
Increased economies of scale by use of PFC and PWM topologies in the application
A higher dv/dt limit enables faster switching leading to higher efficiency
Higher switching frequencies are possible without a loss in efficiency due to low Eoss and Qg
IPW60R017C7XKSA1 Applications
SMPSe.g.Computing
Server
Telecom
UPSandSolar
PFCstages and PWMstages(TTF,LLC)for highpower/performance