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IPW60R017C7XKSA1

IPW60R017C7XKSA1

IPW60R017C7XKSA1

Infineon Technologies

IPW60R017C7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IPW60R017C7XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Package / Case TO-247-3
Surface Mount NO
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Power Dissipation 446W
Case Connection DRAIN
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 109A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 495A
Avalanche Energy Rating (Eas) 582 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 15mOhm
Height 25.4mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
240 $17.59967 $4223.9208
IPW60R017C7XKSA1 Product Details

IPW60R017C7XKSA1 Description

IPW60R017C7XKSA1 is a 600V CoolMOS? C7 power transistor, a revolutionary technology for high voltage power MOSFETs. IPW60R017C7XKSA1 is designed according to the super-junction (SJ) principle and is suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS, and solar.


IPW60R017C7XKSA1 Features

  • Best in class RDS(on)/package

  • Enabling higher system efficiency by lower switching losses

  • Increased power density solutions due to smaller packages

  • Suitable for hard and soft switching (PFC and high-performance LLC)

  • Increased MOSFET dv/dt ruggedness to 120V/ns

  • Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

  • Qualified for industrial-grade applications according to JEDEC (J-STD20 and JESD22)

  • Increased economies of scale by use of PFC and PWM topologies in the application

  • A higher dv/dt limit enables faster switching leading to higher efficiency

  • Higher switching frequencies are possible without a loss in efficiency due to low Eoss and Qg


IPW60R017C7XKSA1 Applications

  • SMPSe.g.Computing

  • Server

  • Telecom

  • UPSandSolar

  • PFCstages and PWMstages(TTF,LLC)for highpower/performance


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