IRFP260NPBF

new-10%

IRFP260NPBF

Manufacturer part number:IRFP260NPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Bulk 40m Ω @ 28A, 10V ±20V 4057pF @ 25V 234nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:IRFP260NPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Series	HEXFET®
Published	2004
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	50A
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4057pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	234nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	200A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	560 mJ
Recovery Time	402 ns
Nominal Vgs	4 V
Height	20.2946mm
Length	15.875mm
Width	5.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free