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AUIRFR8401

AUIRFR8401

AUIRFR8401

Infineon Technologies

AUIRFR8401 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRFR8401 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Base Part Number IRFR8401
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.25mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 3.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 2.2nF
Drain to Source Resistance 4.25mOhm
Rds On Max 4.25 mΩ
Nominal Vgs 2.2 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
AUIRFR8401 Product Details

AUIRFR8401 Description


This HEXFET? Power MOSFETs, which is specifically made for automotive applications, makes use of cutting-edge processing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.



AUIRFR8401 Features


  • Technology for Advanced Processes

  • Introducing New Ultra Low On-Resistance

  • Operating temperature of 175 °C

  • Quick Switching

  • Recurrent Avalanche Permitted up to Tjmax

  • Lead-free and compliant with RoHS

  • Automotive Competent



AUIRFR8401 Applications


  • EPS (Electric Power Steering)

  • Charger Switch

  • Micro Hybrid Start/Stop

  • Large Loads

  • Converter for DC-DC


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