AUIRGF65G40D0 Description

The AUIRGF65G40D0 is an ultrafast IGBT with ultrafast soft recovery diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

AUIRGF65G40D0 Features

• Maximum Junction Temperature 175 °C

• Square RBSOA

• Positive VCE (on) Temperature Coefficient

• Designed And Qualified for Automotive Applications

• Ultra Fast Switching IGBT:70-200kHz

• Extremely Low Switching Losses

AUIRGF65G40D0 Applications

• DC-DC Converter

• PFC

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.