Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*12N100
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.5V
Max Collector Current	24A
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	100 ns
Test Condition	800V, 12A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 12A
Turn Off Time-Nom (toff)	900 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	100ns/850ns
Switching Energy	2.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	700ns
RoHS Status	RoHS Compliant

IXGA12N100

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