IHW30N135R3FKSA1

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Manufacturer part number:IHW30N135R3FKSA1

Manufacturer:Infineon Technologies

Description:IHW30N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHW30N135R3FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2006
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	349W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Power Dissipation	175W
Input Type	Standard
Power - Max	349W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.35kV
Max Collector Current	60A
Collector Emitter Breakdown Voltage	1.35kV
Voltage - Collector Emitter Breakdown (Max)	1350V
Collector Emitter Saturation Voltage	1.85V
Test Condition	600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 30A
IGBT Type	Trench
Gate Charge	263nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	-/337ns
Switching Energy	1.93mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.4V
RoHS Status	RoHS Compliant
Lead Free	Lead Free