AUIRGSL30B60K

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Manufacturer part number:AUIRGSL30B60K

Manufacturer:Infineon Technologies

Description:AUIRGSL30B60K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRGSL30B60K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	370W
Number of Elements	1
Element Configuration	Single
Power Dissipation	370W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	78A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	74 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 30A
Turn Off Time-Nom (toff)	237 ns
IGBT Type	NPT
Gate Charge	102nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	46ns/185ns
Switching Energy	350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	42ns
Height	11.3mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free