NGB8207NT4G

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Manufacturer part number:NGB8207NT4G

Manufacturer:ON Semiconductor

Description:NGB8207NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGB8207NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	165W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NGB8207
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	2700ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	165W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	365V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	365V
Turn On Time	2450 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 4V, 20A
Turn Off Time-Nom (toff)	14700 ns
Current - Collector Pulsed (Icm)	50A
Gate-Emitter Voltage-Max	15V
Gate-Emitter Thr Voltage-Max	2V
Fall Time-Max (tf)	15000ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free