IXXP50N60B3

new-10%

Manufacturer part number:IXXP50N60B3

Manufacturer:IXYS

Description:IGBT

Case Package:SOT-23

Datasheet:IXXP50N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	XPT™, GenX3™
Part Status	Active
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Reach Compliance Code	compliant
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	40ns
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	120A
Power Dissipation-Max (Abs)	600W
Turn On Time	75 ns
Test Condition	360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 36A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	70nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	27ns/150ns
Switching Energy	670μJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant