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STGWT40V60DLF

  • STGWT40V60DLF
  • STGWT40V60DLF

STGWT40V60DLF

STGWT40V60DLF

STMicroelectronics

STGWT40V60DLF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT40V60DLF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 283W
Base Part Number STGWT40
Element Configuration Single
Power Dissipation 283W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 226nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C -/208ns
Switching Energy 411μJ (off)
Gate-Emitter Voltage-Max 20V
Height 26.7mm
Length 15.7mm
Width 5.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.31000 $4.31
30 $3.66200 $109.86
120 $3.17367 $380.8404
STGWT40V60DLF Product Details

STGWT40V60DLF Description


The STGWT40V60DLF is an IGBT developed using an advanced proprietary trench gate field stop structure. 



STGWT40V60DLF Features


  • Designed for soft commutation only

  • Maximum junction temperature: TJ = 175 °C

  • Tail-less switching off

  • VCE(sat) = 1.8 V (typ.) @ IC = 40 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Low VF soft recovery co-packaged diode



STGWT40V60DLF Applications


  • Induction heating

  • Microwave oven

  • Resonant converters


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