AUIRL7736M2TR

new-10%

Manufacturer part number:AUIRL7736M2TR

Manufacturer:Infineon Technologies

Description:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms

Case Package:SOT-23

Datasheet:AUIRL7736M2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric M4
Number of Pins	9
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Additional Feature	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 63W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 67A, 10V
Vgs(th) (Max) @ Id	2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5055pF @ 25V
Current - Continuous Drain (Id) @ 25°C	179A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 4.5V
Rise Time	210ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	76 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	179A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.003Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	450A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant