STB18N60DM2

new-10%

Manufacturer part number:STB18N60DM2

Manufacturer:STMicroelectronics

Description:STMICROELECTRONICS STB18N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:STB18N60DM2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Manufacturer Package Identifier	D2PAK-0079457
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ DM2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB18N
Number of Channels	1
Power Dissipation-Max	90W Tc
Power Dissipation	110W
Turn On Delay Time	13.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	295m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Max Junction Temperature (Tj)	150°C
Height	4.83mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant