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BC 808-40 B6327

BC 808-40 B6327

BC 808-40 B6327

Infineon Technologies

BC 808-40 B6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 808-40 B6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC808
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS Status RoHS Compliant
BC 808-40 B6327 Product Details

BC 808-40 B6327 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.

BC 808-40 B6327 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz

BC 808-40 B6327 Applications


There are a lot of Infineon Technologies BC 808-40 B6327 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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