BC817K25E6327HTSA1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 170MHz.The breakdown input voltage is 45V volts.A maximum collector current of 500mA volts is possible.

BC817K25E6327HTSA1 Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BC817K25E6327HTSA1 Applications

There are a lot of Infineon Technologies BC817K25E6327HTSA1 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface