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BC817K25WH6433XTMA1

  • BC817K25WH6433XTMA1
  • BC817K25WH6433XTMA1

BC817K25WH6433XTMA1

BC817K25WH6433XTMA1

Infineon Technologies

BC817K25WH6433XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC817K25WH6433XTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 170MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC817
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 170MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.075104 $0.075104
10 $0.070853 $0.70853
100 $0.066842 $6.6842
500 $0.063059 $31.5295
1000 $0.059489 $59.489
BC817K25WH6433XTMA1 Product Details

BC817K25WH6433XTMA1 Overview


DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.170MHz is present in the transition frequency.A maximum collector current of 500mA volts is possible.

BC817K25WH6433XTMA1 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BC817K25WH6433XTMA1 Applications


There are a lot of Infineon Technologies BC817K25WH6433XTMA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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