BC817K25WH6433XTMA1 Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.170MHz is present in the transition frequency.A maximum collector current of 500mA volts is possible.
BC817K25WH6433XTMA1 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K25WH6433XTMA1 Applications
There are a lot of Infineon Technologies BC817K25WH6433XTMA1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
