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BC818K16WH6327XTSA1

BC818K16WH6327XTSA1

BC818K16WH6327XTSA1

Infineon Technologies

BC818K16WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC818K16WH6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 170MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC818
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 170MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.310145 $0.310145
10 $0.292589 $2.92589
100 $0.276028 $27.6028
500 $0.260403 $130.2015
1000 $0.245664 $245.664
BC818K16WH6327XTSA1 Product Details

BC818K16WH6327XTSA1 Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.170MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC818K16WH6327XTSA1 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BC818K16WH6327XTSA1 Applications


There are a lot of Infineon Technologies BC818K16WH6327XTSA1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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