BC818K16WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC818K16WH6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
170MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC818
Number of Elements
1
Configuration
SINGLE
Power Dissipation
250mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
25V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
170MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.310145
$0.310145
10
$0.292589
$2.92589
100
$0.276028
$27.6028
500
$0.260403
$130.2015
1000
$0.245664
$245.664
BC818K16WH6327XTSA1 Product Details
BC818K16WH6327XTSA1 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.170MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC818K16WH6327XTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 170MHz
BC818K16WH6327XTSA1 Applications
There are a lot of Infineon Technologies BC818K16WH6327XTSA1 applications of single BJT transistors.