BC818K16WH6327XTSA1 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.170MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC818K16WH6327XTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC818K16WH6327XTSA1 Applications
There are a lot of Infineon Technologies BC818K16WH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
