NSV20201LT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A transition frequency of 150MHz is present in the part.A maximum collector current of 2A volts is possible.

NSV20201LT1G Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

NSV20201LT1G Applications

There are a lot of ON Semiconductor NSV20201LT1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver