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MJH11020G

MJH11020G

MJH11020G

ON Semiconductor

MJH11020G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJH11020G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation150W
Peak Reflow Temperature (Cel) 260
Current Rating15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Collector Emitter Breakdown Voltage200V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage2.5V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Height 12.2mm
Length 15.2mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1104 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.78000$3.78
30$3.22967$96.8901
120$2.81467$337.7604
510$2.41369$1230.9819

MJH11020G Product Details

MJH11020G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 10A 5V DC current gain.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 150mA, 15A.A constant collector voltage of 15A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

MJH11020G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 3MHz

MJH11020G Applications


There are a lot of ON Semiconductor MJH11020G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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