NSVMMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 100MHz is present in the part.A maximum collector current of 200mA volts is possible.
NSVMMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSVMMBT6429LT1G Applications
There are a lot of ON Semiconductor NSVMMBT6429LT1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
