BC847CE6433HTMA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 250MHz is present in the part.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 100mA volts can be achieved.
BC847CE6433HTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847CE6433HTMA1 Applications
There are a lot of Infineon Technologies BC847CE6433HTMA1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
