2SD1835T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SD1835T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
750mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.11000
$0.11
500
$0.1089
$54.45
1000
$0.1078
$107.8
1500
$0.1067
$160.05
2000
$0.1056
$211.2
2500
$0.1045
$261.25
2SD1835T Product Details
2SD1835T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of 3-NP.The device has a 50V maximal voltage - Collector Emitter Breakdown.
2SD1835T Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 400mV @ 50mA, 1A the supplier device package of 3-NP
2SD1835T Applications
There are a lot of Rochester Electronics, LLC 2SD1835T applications of single BJT transistors.