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2SD1835T

2SD1835T

2SD1835T

Rochester Electronics, LLC

2SD1835T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SD1835T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package 3-NP
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 750mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 150MHz
RoHS StatusNon-RoHS Compliant
In-Stock:63051 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.11000$0.11
500$0.1089$54.45
1000$0.1078$107.8
1500$0.1067$160.05
2000$0.1056$211.2
2500$0.1045$261.25

2SD1835T Product Details

2SD1835T Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of 3-NP.The device has a 50V maximal voltage - Collector Emitter Breakdown.

2SD1835T Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-NP

2SD1835T Applications


There are a lot of Rochester Electronics, LLC 2SD1835T applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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