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BC848CE6433HTMA1

BC848CE6433HTMA1

BC848CE6433HTMA1

Infineon Technologies

BC848CE6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC848CE6433HTMA1 Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 30V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC848
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Height 900μm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.639243 $0.639243
10 $0.603059 $6.03059
100 $0.568923 $56.8923
500 $0.536721 $268.3605
1000 $0.506340 $506.34
BC848CE6433HTMA1 Product Details

BC848CE6433HTMA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.A collector emitter saturation voltage of 600mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.In the part, the transition frequency is 250MHz.Breakdown input voltage is 30V volts.Collector current can be as low as 100mA volts at its maximum.

BC848CE6433HTMA1 Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz

BC848CE6433HTMA1 Applications


There are a lot of Infineon Technologies BC848CE6433HTMA1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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