BC857BE6327HTSA1 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 650mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857BE6327HTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BE6327HTSA1 Applications
There are a lot of Infineon Technologies BC857BE6327HTSA1 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
